| PART |
Description |
Maker |
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| MAFRIN0494 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
M/A-COM Technology Solutions, Inc.
|
| MAFRIN0370 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
MACOM[Tyco Electronics]
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| MHVIC910HNR2 |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit Documentation
921 MHz-960 MHz SiFET RF Integrated Power Amplifier
|
MOTOROLA
|
| LC-FSLC-S090M-P1-0406A FSLC-S090M-P1 |
925 MHz - 960 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.3 dB INSERTION LOSS-MAX
2012 Size 925/960 MHz
|
Hitachi Metals, Ltd.
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| EMRS-6X1_1 EMRS-6X1 EMRS-6X1TR EMRS-6X11 |
E-Series Surface Mount Mixer 925-960 MHz, 1805-1880 MHz, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| AWB7225 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| HW8185 |
40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
